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Plasmonic Energy Collection through Hot Carrier ExtractionFUMING WANG; MELOSH, Nicholas A.Nano letters (Print). 2011, Vol 11, Num 12, pp 5426-5430, issn 1530-6984, 5 p.Article

Frequency Effect on Voltage Linearity of ZrO₂-Based RF Metal-Insulator-Metal CapacitorsBERTAUD, Thomas; BLONKOWSKI, Serge; BERMOND, Cédric et al.IEEE electron device letters. 2010, Vol 31, Num 2, pp 114-116, issn 0741-3106, 3 p.Article

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An Adaptive Equalizer With the Capacitance Multiplication for DisplayPort Main Link in 0.18-μm CMOSLEE, Won-Young; KIM, Lee-Sup.IEEE transactions on very large scale integration (VLSI) systems. 2012, Vol 20, Num 5, pp 964-968, issn 1063-8210, 5 p.Article

Improved Stress Reliability of Analog Metal―Insulator―Metal Capacitors Using TiO₂/ZrO₂ DielectricsLIN, S. H; CHIANG, K. C; YEH, F. S et al.IEEE electron device letters. 2009, Vol 30, Num 12, pp 1287-1289, issn 0741-3106, 3 p.Article

Capacitance non-linearity study in Al₂O₃ MIM capacitors using an ionic polarization modelBECU, S; CREMER, S; AUTRAN, J. L et al.Microelectronic engineering. 2006, Vol 83, Num 11-12, pp 2422-2426, issn 0167-9317, 5 p.Conference Paper

High quality high-k MIM capacitor by Ta₂O₅/HfO₂/Ta₂O₅ multi-layered dielectric and nh₃ plasma interface treatments for mixed-signal/RF applicationsJEONG, Yong-Kuk; WON, Seok-Jun; KWON, Dae-Jin et al.Symposium on VLSI Technology. sd, pp 222-223, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper

Impact of the forming conditions and electrode metals on read disturb in HfO₂-based RRAMLORENZI, P; RAO, R; PRIFTI, T et al.Microelectronics and reliability. 2013, Vol 53, Num 9-11, pp 1203-1207, issn 0026-2714, 5 p.Conference Paper

A novel RFCMOS process monitoring test structureSIA, C. B; ONG, B. H; LIM, K. M et al.2004 international conference on microelectronic test structures. 2004, pp 45-50, isbn 0-7803-8262-5, 1Vol, 6 p.Conference Paper

A high gain, low voltage folded-switching mixer with current-reuse in 0.18 μm CMOSVIDOJKOVIC, Vojkan; VAN DER TANG, Johan; LEEUWENBURGH, Arjan et al.IEEE radio frequency integrated circuits symposium. 2004, pp 31-34, isbn 0-7803-8333-8, 1Vol, 4 p.Conference Paper

Fabrication and electrooptical characterisation of an AFLC-MIN deviceRODRIGO, C; QUINTANA, X; KÖBERLE, M et al.Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals. 1999, Vol 331, pp 349-354, issn 1058-725XConference Paper

Single-parameter model for the post-breakdown conduction characteristics of HoTiO_x-based MIM capacitorsBLASCO, J; CASTAN, H; GARCIA, H et al.Microelectronics and reliability. 2014, Vol 54, Num 9-10, pp 1707-1711, issn 0026-2714, 5 p.Conference Paper

Modeling the Negative Quadratic VCC of SiO₂ in MIM CapacitorPHUNG, Thanh Hoa; STEINMANN, Philipp; WISE, Rick et al.IEEE electron device letters. 2011, Vol 32, Num 12, pp 1671-1673, issn 0741-3106, 3 p.Article

Effective Modulation of Quadratic Voltage Coefficient of Capacitance in MIM Capacitors Using Sm₂O₃/SiO₂ Dielectric StackYANG, Jian-Jun; CHEN, Jing-De; WISE, Rick et al.IEEE electron device letters. 2009, Vol 30, Num 5, pp 460-462, issn 0741-3106, 3 p.Article

Effect of oval defects in GaAs on the reliability of SiN_xmetal-insulator-metal capacitorsVAN DER WEL, P. J; DE BEER, J. R; VAN BOXTEL, R. J. M et al.Microelectronics and reliability. 2007, Vol 47, Num 8, pp 1188-1193, issn 0026-2714, 6 p.Conference Paper

High-performance SrTiO₃ MIM capacitors for analog applicationsCHIANG, K. C; HUANG, Ching-Chien; CHEN, G. L et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 9, pp 2312-2319, issn 0018-9383, 8 p.Article

Novel RF process monitoring test structure for silicon devicesCHOON BENG SIA; BENG HWEE ONG; KOK MENG LIM et al.IEEE transactions on semiconductor manufacturing. 2005, Vol 18, Num 2, pp 246-254, issn 0894-6507, 9 p.Conference Paper

Atomic layer deposition of dielectrics and electrodes for embedded-dram capacitor cells in 90 nm technology and beyondGERRITSEN, E; JOURDAN, N; PIAZZA, M et al.Proceedings - Electrochemical Society. 2004, pp 328-340, issn 0161-6374, isbn 1-56677-406-3, 13 p.Conference Paper

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Improved electrical properties after post annealing of Ba_0.7Sr_0.3TiO₃ thin films for MIM capacitor applicationsROUAHI, A; KAHOULI, A; SYLVESTRE, A et al.Applied physics. A, Materials science & processing (Print). 2012, Vol 109, Num 3, pp 731-736, issn 0947-8396, 6 p.Article

Effect of deposition conditions on charging processes in SiN_x : Application to RF-MEMS capacitive switchesDAIGLER, Richard; PAPANDREOU, Eleni; KOUTSOURELI, Matroni et al.Microelectronic engineering. 2009, Vol 86, Num 3, pp 404-407, issn 0167-9317, 4 p.Article

RF model of 3-RC network structure for metal-insulator-metal capacitorKANG, I. M; CHOI, T.-H; JOE, J. H et al.Electronics Letters. 2008, Vol 44, Num 19, pp 1140-1141, issn 0013-5194, 2 p.Article

Alpha particle radiation effects in RF MEMS capacitive switchesRUAN, J; PAPANDREOU, E; LAMHAMDI, M et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1241-1244, issn 0026-2714, 4 p.Conference Paper

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